“More than Moore” Materials

Invited Speakers:

  • Nan Du, Technishe Universität Chemnitz, Germany
    Simplifying and speeding up delay learning with BiFeO3-based artificial synapses
  • Michael Hanke, Paul-Drude-Institute, Germany
    Rare-earth oxides studied by in-situ x-ray diffraction
  • Giovanni Isella, LNESS Como, Italy
    SiGe heterostructures for photonics interconnects
  • Yongxun Liu, National Institute of Advanced Industrial Science and Technology (AIST), Japan
    Gate Material and Blocking Layer Material Dependences on the Electrical Characteristics of Charge Trapping Type FinFET Flash Memory
  • Xiangjian Meng, Shanghai Insitute of Technical Physics of the Chinese Academy of Sciences, China
  • Jan Schmidtbauer, Leibniz Institute for Crystal Growth (IKZ), Germany
    MBE Growth Behavior of Si and Ge Nanowires in Comparison
  • Olivier Schneegans, CNRS, France
    Resistive switching phenomena in cobalt oxide thin films
  • Chun-Hsing Shih, National Chi Nan University, Taiwan
    NOR-Type Schottky Barrier Nanowire Charge-Trapping Memories
  • Tseung-Yuen Tseng, National Chiao-Tung University, Taiwan
    ZrO2-Based Resistive Switching Memory Devices
  • Ke Xu, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, China

 

 

 

 

 

Workshop Chairs:

  • Gang Niu, IHP, Germany 
Operating Organization
OAHOST
Sponsors
UESTC
University of Electronic Science and Technology of China
UARK

Springer