Wide-Bandgap Materials

Invited Speakers:

  • Jin-Ping Ao, Institute of Technology and Science, The University of Tokushima, Japan
    GaN MOSFET on AlGaN/GaN Heterostructure with Recess Structure
  • Atsushi Yamaguchi, Kanazawa Institute of Technology, Japan
    Theoretical Study of Optical Gain Characteristics in InGaN Pure-Green Laser Diodes on Semipolar GaN Substrates
  • Vidhya Chakrapani, Rensselaer Polytechnic Institute, USA
    Electrochemical Charge Transfer at the Interface of Wide Band gap Semiconductors
  • Mariana Amorim Fraga, Faculty of Technology of São Paulo, FATEC-SP, Brazil
    Recent progress on the use of SiC and DLC thin films in Piezo Sensors
  • Sang-Wook Han, Chonbuk National University, Korea
    Local structural, electrical, and optical properties of ion-implanted ZnO nanostructures
  • Atsushi Koizumi, Osaka University, Japan
    Optical and electrical properties of Eu,Si-codoped GaN grown by organometallic vapor-phase epitaxy
  • Meiyong Liao, National Institute for Materials Science, Japan
    Diamond as an extreme semiconductor for  photoelectronic and MEMS applications
  • Pierre Ruterana, CNRS, France
    Atomic structure and properties of dislocations in ZnO heterostructures

 

 

 

 

 

 

 

 

 

 

 

Operating Organization
OAHOST
Sponsors
UESTC
University of Electronic Science and Technology of China
UARK

Springer